US 12,218,184 B2
Semiconductor structure and method for forming the same
Jui-Lin Chu, Hsinchu (TW); Szu-Yu Wang, Hsinchu (TW); and Ching I Li, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on May 26, 2022, as Appl. No. 17/824,924.
Prior Publication US 2023/0387189 A1, Nov. 30, 2023
Int. Cl. H01G 4/10 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/75 (2013.01) [H01G 4/10 (2013.01); H01L 21/76814 (2013.01); H01L 23/5223 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a capacitor structure, comprising:
a first electrode layer;
a second electrode layer over the first electrode layer;
a protective dielectric layer covering and contacting a top surface of the first electrode layer;
a capacitor dielectric layer on the protective dielectric layer; and
a protective dielectric sidewall covering a lateral surface of the second electrode layer, wherein the first electrode layer, the second electrode layer, the protective dielectric sidewall, and the protective dielectric layer comprise a same metal element;
a contact structure penetrating the protective dielectric layer and electrically connecting to the second electrode layer.