US 12,218,182 B2
Semiconductor device and method for fabricating the same
Kwan Woo Do, Gyeonggi-do (KR); Wan Joo Maeng, Gyeonggi-do (KR); Jeong Yeop Lee, Gyeonggi-do (KR); and Ki Vin Im, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Nov. 2, 2021, as Appl. No. 17/517,527.
Claims priority of application No. 10-2021-0057713 (KR), filed on May 4, 2021.
Prior Publication US 2022/0359643 A1, Nov. 10, 2022
Int. Cl. H01G 4/10 (2006.01); H01G 4/008 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/75 (2013.01) [H01G 4/008 (2013.01); H01G 4/10 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A capacitor, comprising:
a lower electrode;
a dielectric layer over the lower electrode; and
an upper electrode over the dielectric layer, the upper electrode including a conductive carbon-containing layer,
wherein a carbon content in the conductive carbon-containing layer is more than 5% and equal to or less than 10%,
wherein the conductive carbon-containing layer includes a carbon and oxygen.