| CPC H01L 28/75 (2013.01) [H01L 23/5223 (2013.01); H01L 23/5283 (2013.01); H01L 28/65 (2013.01)] | 20 Claims |
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1. A structure, comprising:
a capacitor structure comprising:
a first electrode bilayer comprising a first metal nitride layer and a second metal nitride layer, each comprising a different nitrogen concentration, wherein the nitrogen concentration in the second metal nitride layer is greater than the nitrogen concentration in the first metal nitride layer;
a dielectric layer disposed on the second metal nitride layer; and
a second electrode bilayer on the dielectric layer comprising a third metal nitride layer and a fourth metal nitride layer, each comprising a different nitrogen concentration, the second electrode bilayer having a smaller surface area than that of the first electrode bilayer,
wherein the dielectric layer has a surface area substantially equal to the first electrode bilayer, and
wherein the nitrogen concentration in the third metal nitride layer is greater than the nitrogen concentration in the fourth metal nitride layer;
an upper conductive structure over the capacitor structure, the upper conductive structure in direct contact with the second electrode bilayer,
wherein a bottom surface of the upper conductive structure is coplanar with a top surface of the fourth metal nitride layer;
a lower conductive structure under the capacitor structure, the lower conductive structure in direct contact with the first electrode bilayer; and
an encapsulation layer in direct contact with sidewall surfaces of the first and second electrode bilayers.
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