US 12,218,180 B2
Multi-layered resistor with a tight temperature coefficient of resistance tolerance
Szu-Hsien Lo, Hsinchu County (TW); Che-Hung Liu, Hsinchu (TW); and Tzu-Chung Tsai, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 7, 2023, as Appl. No. 18/366,156.
Application 18/366,156 is a division of application No. 17/459,093, filed on Aug. 27, 2021, granted, now 11,923,403.
Prior Publication US 2023/0387184 A1, Nov. 30, 2023
Int. Cl. H01L 23/52 (2006.01); H01L 23/522 (2006.01); H01L 27/01 (2006.01); H01L 27/13 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/24 (2013.01) [H01L 23/5228 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated chip (IC), comprising:
a semiconductor substrate;
a first dielectric structure disposed over the semiconductor substrate;
a resistor disposed between the semiconductor substrate and first dielectric structure, the resistor comprising a continuous body of conductive material extending laterally over the semiconductor substrate, wherein continuous body comprises:
a first metal nitride structure;
a second metal nitride structure spaced apart vertically from the first metal nitride structure; and
a metal structure disposed between the first metal nitride structure and the second metal nitride structure;
a second dielectric structure disposed over the semiconductor substrate and the resistor; and
a pair of conductive structures extending through the second dielectric structure and electrically coupled to the second metal nitride structure.
 
2. An integrated chip (IC), comprising:
a semiconductor substrate;
a first dielectric structure disposed over the semiconductor substrate;
a resistor disposed between the semiconductor substrate and first dielectric structure, the resistor comprising a continuous body of conductive material extending laterally over the semiconductor substrate, wherein continuous body comprises:
a first metal nitride structure;
a second metal nitride structure spaced apart vertically from the first metal nitride structure; and
a metal structure disposed between the first metal nitride structure and the second metal nitride structure;
a second dielectric structure disposed over the semiconductor substrate and the resistor; and
a pair of conductive structures extending through the second dielectric structure and electrically coupled to the second metal nitride structure, wherein:
the first metal nitride structure comprises a metal;
the metal structure comprises the metal; and
the second metal nitride structure comprises the metal.
 
8. An integrated chip (IC), comprising:
a semiconductor substrate;
a first dielectric structure disposed over the semiconductor substrate;
a resistor disposed between the semiconductor substrate and first dielectric structure, the resistor comprising a continuous body of conductive material extending laterally over the semiconductor substrate, wherein continuous body comprises:
a first metal nitride structure;
a second metal nitride structure spaced apart vertically from the first metal nitride structure; and
a metal structure disposed between the first metal nitride structure and the second metal nitride structure;
a second dielectric structure disposed over the semiconductor substrate and the resistor; and
a pair of conductive structures extending through the second dielectric structure and electrically coupled to the second metal nitride structure,
the first metal nitride structure has a first thickness; and
the second metal nitride structure has a second thickness that is greater than the first thickness.