US 12,218,173 B2
Image sensor device
Chia-Yu Wei, Tainan (TW); Yen-Liang Lin, Tainan (TW); Kuo-Cheng Lee, Tainan (TW); Hsun-Ying Huang, Tainan (TW); and Hsin-Chi Chen, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Nov. 16, 2023, as Appl. No. 18/511,731.
Application 17/183,871 is a division of application No. 15/809,458, filed on Nov. 10, 2017, granted, now 10,943,942, issued on Mar. 9, 2021.
Application 18/511,731 is a continuation of application No. 18/066,744, filed on Dec. 15, 2022, granted, now 11,855,118.
Application 18/066,744 is a continuation of application No. 17/183,871, filed on Feb. 24, 2021, granted, now 11,532,662, issued on Dec. 20, 2022.
Prior Publication US 2024/0088195 A1, Mar. 14, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); H01L 31/0352 (2006.01); H01L 31/103 (2006.01); H01L 31/028 (2006.01); H01L 31/0296 (2006.01); H01L 31/0304 (2006.01); H01L 31/0312 (2006.01); H01L 31/0336 (2006.01)
CPC H01L 27/14649 (2013.01) [H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14698 (2013.01); H01L 31/035272 (2013.01); H01L 31/103 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14689 (2013.01); H01L 31/028 (2013.01); H01L 31/0296 (2013.01); H01L 31/0304 (2013.01); H01L 31/0312 (2013.01); H01L 31/0336 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor device comprising:
a semiconductor substrate;
a radiation sensing member in the semiconductor substrate, wherein an interface between the radiation sensing member and the semiconductor substrate comprises a direct band gap material;
a shallow trench isolation in the semiconductor substrate and surrounding the radiation sensing member; and
a color filter layer covering the radiation sensing member.