| CPC H01L 27/14636 (2013.01) [H01L 27/14685 (2013.01)] | 20 Claims |

|
1. A semiconductor device, comprising:
a first substrate including a first semiconductor circuit, wherein
the first semiconductor circuit includes a first terminal, and
the first substrate is individualized into a first chip; and
a second substrate including a second semiconductor circuit, wherein
the second semiconductor circuit includes a second terminal,
the first terminal is joined to the second terminal,
the second substrate further includes:
a first insulating layer between the second substrate and the first substrate; and
a second insulating layer between the first insulating layer and the first substrate,
the second terminal is in the second insulating layer,
the second terminal is between the first insulating layer and the first terminal, and
the second terminal faces the second substrate.
|