US 12,218,164 B2
Semiconductor image-sensing structure and method for forming the same
Ming-Hsien Yang, Taichung (TW); Wen-I Hsu, Tainan (TW); Kuan-Fu Lu, Kaohsiung (TW); Feng-Chi Hung, Hsin-Chu County (TW); Jen-Cheng Liu, Hsin-Chu (TW); Dun-Nian Yaung, Taipei (TW); Chun-Hao Chou, Tainan (TW); and Kuo-Cheng Lee, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jan. 28, 2022, as Appl. No. 17/587,262.
Prior Publication US 2023/0275109 A1, Aug. 31, 2023
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14623 (2013.01) [H01L 27/14685 (2013.01); H01L 27/14605 (2013.01); H01L 27/14621 (2013.01); H01L 27/14645 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor image-sensing structure, comprising:
a substrate having a first region and a second region;
a metal grid in the first region; and
a hybrid metal shield in the second region, wherein the hybrid metal shield comprises:
a first metallization layer:
a second metallization layer disposed over the first metallization layer:
a third metallization layer disposed over the second metallization layer; and
a fourth metallization layer disposed over the third metallization layer,
wherein an included angle of the second metallization layer is between approximately 10° and approximately 80°.