US 12,218,159 B2
Image sensor and manufacturing method thereof
Chung-Lei Chen, Hsinchu (TW); Clark Lee, Taipei (TW); Wen-Sheng Wang, Hsinchu (TW); and Chien-Li Kuo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 27, 2022, as Appl. No. 17/874,321.
Application 17/874,321 is a continuation of application No. 16/894,901, filed on Jun. 8, 2020, granted, now 11,664,398.
Claims priority of provisional application 62/906,750, filed on Sep. 27, 2019.
Prior Publication US 2022/0359591 A1, Nov. 10, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14614 (2013.01) [H01L 27/14623 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a storage device, comprising:
a memory element, comprising:
a storage node; and
a storage transistor gate, disposed over the storage node; and
a light shielding element, disposed over the memory element and comprising:
a semiconductor layer, electrically isolated from the memory element, wherein a projection of the light shielding element covers a projection of the storage transistor gate on a plane along a stacking direction of the memory element and the light shielding element.