US 12,218,151 B2
Display device and manufacturing method thereof
So Young Koo, Yongin-si (KR); Jay Bum Kim, Yongin-si (KR); Kyung Jin Jeon, Incheon (KR); Eok Su Kim, Seoul (KR); and Jun Hyung Lim, Seoul (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed on Oct. 3, 2023, as Appl. No. 18/480,494.
Application 18/480,494 is a division of application No. 17/085,976, filed on Oct. 30, 2020, abandoned.
Claims priority of application No. 10-2020-0008722 (KR), filed on Jan. 22, 2020.
Prior Publication US 2024/0030235 A1, Jan. 25, 2024
Int. Cl. H01L 33/62 (2010.01); H01L 27/12 (2006.01)
CPC H01L 27/124 (2013.01) [H01L 27/1288 (2013.01); H01L 33/62 (2013.01); H01L 2933/0066 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A manufacturing method of a display device, the method comprising:
forming a first conductive layer on a substrate;
forming a first insulating layer and a semiconductor layer on the first conductive layer;
forming a first mask pattern including a first portion and a second portion having different thicknesses, and having a first opening, on the semiconductor layer;
patterning the first insulating layer and the semiconductor layer by utilizing the first mask pattern as a mask to form a second opening of the first insulating layer;
removing the second portion of the first mask pattern to form a second mask pattern including a part of the first portion and having a thickness less than the thickness of the first portion;
patterning the semiconductor layer by utilizing the second mask pattern as a mask to form a semiconductor pattern;
forming a second insulating layer and a second conductive layer on the semiconductor pattern;
forming a third insulating layer on the second conductive layer; and
forming a third mask pattern on the third insulating layer and patterning the third insulating layer by utilizing the third mask pattern as a mask to form a third opening overlapping the second opening.