US 12,218,149 B2
Dual gate array substrate and display panel
Cong Wang, Beijing (CN); Yingmeng Miao, Beijing (CN); Dongchuan Chen, Beijing (CN); Seungmin Lee, Beijing (CN); Yanping Liao, Beijing (CN); Xibin Shao, Beijing (CN); and Jiantao Liu, Beijing (CN)
Assigned to BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., Beijing (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/637,893
Filed by Beijing BOE Display Technology Co., Ltd., Beijing (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Apr. 27, 2021, PCT No. PCT/CN2021/090182
§ 371(c)(1), (2) Date Feb. 24, 2022,
PCT Pub. No. WO2022/226768, PCT Pub. Date Nov. 3, 2022.
Prior Publication US 2024/0096902 A1, Mar. 21, 2024
Int. Cl. G02F 1/1362 (2006.01); G02F 1/1333 (2006.01); G02F 1/1339 (2006.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); H01L 27/12 (2006.01)
CPC H01L 27/124 (2013.01) [G02F 1/13394 (2013.01); G02F 1/136286 (2013.01); G02F 1/1368 (2013.01); G02F 1/133345 (2013.01); G02F 1/134363 (2013.01); G02F 1/136227 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A dual gate array substrate, comprising a plurality of groups of dual gate lines, a plurality of data lines and a plurality of pixel pairs arranged on a first substrate;
each group of the plurality of groups of dual gate lines comprising two gate lines opposite to each other; the plurality of groups of dual gate lines intersecting with the plurality of data lines;
each group of dual gate lines and the plurality of data lines defining a plurality of defined regions; each pixel pair being in a corresponding defined region; the pixel pair comprising two pixel units arranged along an extending direction of the gate line; the pixel unit comprising a common electrode and a thin film transistor,
wherein the dual gate array substrate further comprises a plurality of common electrode lines, each of the plurality of common electrode lines is arranged between two pixel units in a same pixel pair; and
a layer where the common electrode line is located and a layer where a source/drain electrode of the thin film transistor is located are different layers and insulated from each other,
wherein the two pixel units in the same pixel pair are connected to a same data line;
in two pixel pairs adjacent to each other in an extending direction of the data line, the pixel units in different pixel pairs are connected to two adjacent data lines, respectively; and
in two pixel pairs adjacent to each other in the extending direction of the gate line, the pixel units in different pixel pairs are connected to two adjacent data lines, respectively.