US 12,218,144 B2
Semiconductor device having specified relative material concentration between In—Ga—Zn—O films
Shunpei Yamazaki, Setagaya (JP); Junichi Koezuka, Tochigi (JP); Yasutaka Nakazawa, Tochigi (JP); Yukinori Shima, Tatebayashi (JP); Masami Jintyou, Shimotsuga (JP); Masayuki Sakakura, Isehara (JP); and Motoki Nakashima, Atsugi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Dec. 7, 2023, as Appl. No. 18/531,767.
Application 18/531,767 is a continuation of application No. 17/370,075, filed on Jul. 8, 2021, granted, now 11,843,004.
Application 17/370,075 is a continuation of application No. 16/420,858, filed on May 23, 2019, granted, now 11,063,066, issued on Jul. 13, 2021.
Application 16/420,858 is a continuation of application No. 14/247,676, filed on Apr. 8, 2014, granted, now 10,304,859, issued on May 28, 2019.
Claims priority of application No. 2013-084074 (JP), filed on Apr. 12, 2013.
Prior Publication US 2024/0105734 A1, Mar. 28, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01)
CPC H01L 27/1225 (2013.01) [H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H01L 21/02609 (2013.01); H01L 27/1229 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A display device comprising:
a gate electrode over a substrate;
a gate insulating film over the gate electrode;
a first In—Ga—Zn oxide film over the gate insulating film;
a second In—Ga—Zn oxide film over the first In—Ga—Zn oxide film;
a pair of electrodes over the second In—Ga—Zn oxide film, the pair of electrodes comprising titanium;
a pixel electrode electrically connected to one of the pair of electrodes; and
a liquid crystal layer over the pixel electrode,
wherein the first In—Ga—Zn oxide film comprises In, Ga, and Zn at an atomic ratio of 1:1:1, and
wherein the second In—Ga—Zn oxide film comprises In, Ga, and Zn at an atomic ratio of 1:3:6.