US 12,218,138 B2
Air gap formation between gate spacer and epitaxy structure
Bo-Yu Lai, Taipei (TW); Kai-Hsuan Lee, Hsinchu (TW); Wei-Yang Lee, Taipei (TW); Feng-Cheng Yang, Hsinchu County (TW); and Yen-Ming Chen, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsnichu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Nov. 15, 2023, as Appl. No. 18/510,370.
Application 17/113,209 is a division of application No. 16/412,007, filed on May 14, 2019, granted, now 10,861,753, issued on Dec. 8, 2020.
Application 18/510,370 is a continuation of application No. 17/885,383, filed on Aug. 10, 2022, granted, now 11,855,097.
Application 17/885,383 is a continuation of application No. 17/113,209, filed on Dec. 7, 2020, granted, now 11,456,295, issued on Sep. 27, 2022.
Claims priority of provisional application 62/752,856, filed on Oct. 30, 2018.
Prior Publication US 2024/0088155 A1, Mar. 14, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01)
CPC H01L 27/0924 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823864 (2013.01); H01L 29/0653 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/31111 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
source/drain regions over a substrate;
a gate structure laterally between the source/drain regions;
a first gate spacer on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region; and
a dielectric material between the first one of the source/drain regions and the void region, the dielectric material having a gradient ratio of a first chemical element to a second chemical element.