US 12,218,128 B2
Nitride-based semiconductor bidirectional switching device and method for manufacturing the same
Qiyue Zhao, Suzhou (CN); Chunhua Zhou, Suzhou (CN); Maolin Li, Suzhou (CN); Wuhao Gao, Suzhou (CN); Chao Yang, Suzhou (CN); Guanshen Yang, Suzhou (CN); and Shaopeng Cheng, Suzhou (CN)
Assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou (CN)
Filed by INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou (CN)
Filed on Dec. 22, 2021, as Appl. No. 17/560,165.
Application 17/560,165 is a continuation of application No. 17/436,073, previously published as PCT/CN2021/095865, filed on May 25, 2021.
Prior Publication US 2022/0384424 A1, Dec. 1, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/06 (2006.01); H01L 21/768 (2006.01); H01L 21/8252 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H02M 7/155 (2006.01); H03K 17/687 (2006.01); H02M 1/00 (2006.01)
CPC H01L 27/0605 (2013.01) [H01L 21/76898 (2013.01); H01L 21/8252 (2013.01); H01L 23/481 (2013.01); H01L 23/5286 (2013.01); H01L 27/0222 (2013.01); H01L 27/0629 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H02M 7/155 (2013.01); H03K 17/6871 (2013.01); H02M 1/0054 (2021.05)] 17 Claims
OG exemplary drawing
 
1. A nitride-based bidirectional switching device with substrate potential management capability, having a control node, a first power/load node, a second power/load node and a main substrate, and comprising:
a nitride-based bilateral transistor having a first gate terminal connected to the control node, a first source/drain terminal connected to the first power/load node, a second source/drain terminal connected to the second power/load node; and a main substrate terminal connected to the main substrate; and
a substrate potential management circuit configured for managing a potential of the main substrate comprising:
a first potential stabilizing element having a control terminal electrically connected to the control node, a first conduction terminal electrically connected to the first power/load node; a second conduction terminal electrically connected to the main substrate and a substrate terminal electrically connected to the main substrate;
a second potential stabilizing element having a first conduction terminal connected to the main substrate and a second conduction terminal connected to the control node; and
wherein when a high-level voltage is applied to the control node, the first potential stabilizing element has a first resistance lower than a second resistance of the second potential stabilizing element such that a potential of the main substrate is substantially equal to a lower one of potentials of the first and second power/load nodes; and
wherein when a low-level voltage is applied to the control node, the first resistance is higher than the second resistance such that the potential of the main substrate is substantially equal to the low-level voltage.