US 12,218,124 B2
Gate control circuit, semiconductor device, electronic apparatus, and vehicle
Toru Takuma, Kyoto (JP); Adrian Joita, Kyoto (JP); and Shuntaro Takahashi, Kyoto (JP)
Assigned to ROHM Co., LTD., Kyoto (JP)
Filed by ROHM Co., LTD., Kyoto (JP)
Filed on Oct. 26, 2022, as Appl. No. 18/049,731.
Claims priority of application No. 2021-176335 (JP), filed on Oct. 28, 2021.
Prior Publication US 2023/0133872 A1, May 4, 2023
Int. Cl. H03K 17/06 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H02M 3/156 (2006.01); H03K 17/082 (2006.01); H03K 19/0185 (2006.01); H02M 1/08 (2006.01)
CPC H01L 27/0255 (2013.01) [H01L 29/7808 (2013.01); H02M 3/156 (2013.01); H03K 17/063 (2013.01); H03K 17/0822 (2013.01); H03K 19/018521 (2013.01); H02M 1/08 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A gate control circuit that generates a gate control signal of an output transistor connected between an application end of a power supply voltage and an application end of an output voltage, the gate control circuit comprising:
a first current source connected between the application end of the power supply voltage and the application end of the output voltage;
a second current source connected between an application end of a booster voltage and an application end of a reference voltage, the booster voltage being raised to a voltage value higher than the power supply voltage in a steady state;
an output stage that uses at least one of the first current source and the second current source to generate a gate charge current for charging a gate of the output transistor; and
a controller that uses at least one of the first current source and the second current source according to the output voltage.