| CPC H01L 25/18 (2013.01) [H01L 23/481 (2013.01); H01L 24/05 (2013.01); H01L 24/16 (2013.01); H01L 25/16 (2013.01); H01L 25/50 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/16146 (2013.01)] | 9 Claims | 

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               1. A stacked interposer structure, comprising: 
            a first interposer comprising: 
                a first core comprising a semiconductor material; 
                  a first redistribution structure comprising multiple redistribution layers (RDLs) over a side of the first core, the first redistribution structure configured for operably coupling, on a surface of the first redistribution structure, to one or more memory device stack locations and to a processor device location; 
                  cache memory at least partially within the first core adjacent the first redistribution structure under and operably coupled through the first redistribution structure to the processor device location; and 
                  a first set of through silicon vias (TSVs) extending from the first redistribution structure through the first core to an opposite side of the first core; and 
                a second interposer comprising: 
                a second core comprising a semiconductor material; 
                  a second redistribution structure comprising multiple redistribution layers (RDLs) over a side of the second core; 
                  a second set of through silicon vias (TSVs) extending from the second redistribution structure through the second core to an opposite side of the second core; 
                the first interposer and the second interposer being oriented with the first redistribution structure and the second redistribution structure facing in a common direction; and 
                the first and second redistribution structures being operably coupled through only one of the first set of TSVs and the second set of TSVs. 
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