US 12,218,112 B2
Method of forming light-emitting diodes with light coupling and conversion layers
Florian Pschenitzka, San Francisco, CA (US)
Assigned to Kateeva, Inc., Newark, CA (US)
Filed by Kateeva, Inc., Newark, CA (US)
Filed on May 24, 2023, as Appl. No. 18/323,201.
Application 18/323,201 is a continuation of application No. 17/301,601, filed on Apr. 8, 2021, granted, now 11,694,998.
Application 17/301,601 is a continuation of application No. 16/527,753, filed on Jul. 31, 2019, granted, now 11,004,835, issued on May 11, 2021.
Claims priority of provisional application 62/716,881, filed on Aug. 9, 2018.
Prior Publication US 2023/0352459 A1, Nov. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 25/075 (2006.01); H01L 33/32 (2010.01); H01L 33/50 (2010.01)
CPC H01L 25/0753 (2013.01) [H01L 33/32 (2013.01); H01L 33/504 (2013.01); H01L 33/505 (2013.01); H01L 33/508 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0091 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first confinement feature over a first light-emitting diode of a substrate;
forming a first scattering layer comprising scattering particles over the first light-emitting diode;
forming a red light-emission layer comprising red-emitting particles and scattering particles over the first scattering layer;
forming a second confinement feature over a second light-emitting diode of the substrate;
forming a second scattering layer comprising scattering particles over the second light-emitting diode; and
forming a green light-emission layer comprising green-emitting particles and scattering particles over the second scattering layer.