US 12,218,109 B2
Arrangement having semiconductor components that emit electromagnetic radiation and production method therefor
Thomas Schwarz, Regensburg (DE); Sebastian Wittmann, Regenstauf (DE); and Andreas Plößl, Regensburg (DE)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/614,249
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed May 27, 2020, PCT No. PCT/EP2020/064731
§ 371(c)(1), (2) Date Nov. 24, 2021,
PCT Pub. No. WO2020/239852, PCT Pub. Date Dec. 3, 2020.
Claims priority of application No. 102019114315.2 (DE), filed on May 28, 2019.
Prior Publication US 2022/0223570 A1, Jul. 14, 2022
Int. Cl. H01L 25/075 (2006.01); H01L 27/14 (2006.01); H01L 33/00 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01)
CPC H01L 25/0753 (2013.01) [H01L 27/14 (2013.01); H01L 33/005 (2013.01); H01L 33/465 (2013.01); H01L 33/62 (2013.01); H01L 2933/0066 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An arrangement comprising:
a plurality of optoelectronic semiconductor components arranged in a common plane, wherein each semiconductor component is laterally delimited by side faces, and wherein each semiconductor component comprises:
a semiconductor body comprising an active region configured to emit electromagnetic radiation,
a radiation outlet side configured to couple out the electromagnetic radiation,
a rear face opposite to the radiation outlet side, and
a contact structure arranged on the rear face;
an output element;
an electrically insulating insulation layer; and
an electrical connection structure,
wherein the insulation layer is arranged between side faces of adjacent semiconductor components and is absorbent or reflective of the electromagnetic radiation,
wherein the output element is arranged at the radiation outlet sides of the semiconductor components,
wherein the electrical connection structure is arranged on sides of the semiconductor components facing the rear faces and is electrically conductively connected with the contact structure,
wherein the electrical connection structure comprises an adhesive layer, a growth layer and a connection layer, and
wherein the semiconductor body comprises a semiconductor layer sequence and a radiation permeable substrate, wherein the active region is arranged within the semiconductor layer sequence, and wherein the substrate is arranged on a side of the semiconductor layer sequence opposite to the contact structures.