US 12,218,105 B2
Package and method of forming the same
Jie Chen, New Taipei (TW); Hsien-Wei Chen, Hsinchu (TW); and Ming-Fa Chen, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 27, 2023, as Appl. No. 18/308,621.
Application 18/308,621 is a division of application No. 17/073,415, filed on Oct. 19, 2020, granted, now 11,670,621.
Application 17/073,415 is a division of application No. 16/252,727, filed on Jan. 21, 2019, granted, now 10,811,390, issued on Oct. 20, 2020.
Prior Publication US 2023/0268322 A1, Aug. 24, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01)
CPC H01L 25/0657 (2013.01) [H01L 21/4857 (2013.01); H01L 21/56 (2013.01); H01L 21/76877 (2013.01); H01L 22/14 (2013.01); H01L 22/32 (2013.01); H01L 23/3107 (2013.01); H01L 23/49822 (2013.01); H01L 24/03 (2013.01); H01L 24/08 (2013.01); H01L 24/27 (2013.01); H01L 24/32 (2013.01); H01L 25/50 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/32145 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package, comprising:
a first die and a second die bonded together through a bonding structure,
wherein the bonding structure comprises a first bonding structure disposed over a front side of the first die, and the first bonding structure comprises a first bonding dielectric layer, and the first bonding dielectric layer has a first protrusion extending from the front side of the first die toward a first interconnect structure of the first die,
wherein the front side of the first die and a backside of the second die are bonded together by the bonding structure.