| CPC H01L 25/0657 (2013.01) [H01L 25/50 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06537 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06586 (2013.01)] | 20 Claims | 

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               1. A semiconductor device assembly comprising: 
            a substrate; 
                a semiconductor die stack electrically coupled to the substrate; 
                an ionizing radiation shield disposed over a top die of the semiconductor die stack, wherein the ionizing radiation shield comprises silicon carbide (SiC); and 
                an encapsulant at least partially encapsulating the semiconductor die stack and the ionizing radiation shield. 
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