CPC H01L 24/13 (2013.01) [G06N 10/00 (2019.01); H01L 24/81 (2013.01); H01L 25/16 (2013.01); H01L 2224/13105 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13117 (2013.01); H01L 2224/1312 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13179 (2013.01); H01L 2224/1357 (2013.01); H01L 2224/13666 (2013.01); H01L 2224/8112 (2013.01); H01L 2224/81203 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01031 (2013.01); H01L 2924/01041 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01048 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01083 (2013.01); H01L 2924/04941 (2013.01)] | 16 Claims |
1. A method for bonding substrates, the method comprising:
depositing, on a first substrate, one or more tin bond deposits, the one or more tin bond deposits comprising tin;
heating the first substrate to a tin contact bond formation temperature; and
pressing the first substrate against a second substrate to form one or more tin contact bonds from the one or more tin bond deposits;
wherein one of the first substrate or the second substrate comprises one or more qubits and another of the first substrate or the second substrate comprises one or more control devices configured to control the one or more qubits.
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