US 12,218,087 B2
Semiconductor device with composite conductive features and method for fabricating the same
Teng-Yen Huang, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Mar. 7, 2024, as Appl. No. 18/598,167.
Application 18/598,167 is a division of application No. 17/698,545, filed on Mar. 18, 2022, granted, now 12,002,772.
Prior Publication US 2024/0250047 A1, Jul. 25, 2024
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01)
CPC H01L 24/03 (2013.01) [H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 24/02 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/03001 (2013.01); H01L 2224/03011 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/0361 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05193 (2013.01); H01L 2224/05546 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/05676 (2013.01); H01L 2224/0568 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/06517 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80379 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/0496 (2013.01); H01L 2924/0504 (2013.01); H01L 2924/0509 (2013.01); H01L 2924/0544 (2013.01); H01L 2924/059 (2013.01); H01L 2924/30105 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, comprising:
providing a first semiconductor structure comprising a plurality of first composite conductive features, wherein at least one of the plurality of first composite conductive features includes a protection liner, a graphene liner in the protection liner and a core conductor in the graphene liner, wherein top surfaces of the protection liner, the graphene liner and the core conductor are coplanar with each other; and
forming a first connecting structure comprising a first connecting insulating layer on the first semiconductor structure, two first conductive layers in the first connecting insulating layer, and a first porous layer between the two first conductive layers;
wherein a porosity of the first porous layer is between about 25% and about 100%.