US 12,218,085 B2
Substrate, electronic device, and method for manufacturing substrate
Hirofumi Makino, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/612,645
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Apr. 8, 2020, PCT No. PCT/JP2020/015778
§ 371(c)(1), (2) Date Nov. 19, 2021,
PCT Pub. No. WO2020/241067, PCT Pub. Date Dec. 3, 2020.
Claims priority of application No. 2019-100900 (JP), filed on May 30, 2019.
Prior Publication US 2022/0238463 A1, Jul. 28, 2022
Int. Cl. H01L 21/48 (2006.01); H01L 23/427 (2006.01); H01L 23/498 (2006.01); H01L 23/66 (2006.01); H01P 3/08 (2006.01); H01P 11/00 (2006.01)
CPC H01L 23/66 (2013.01) [H01L 21/486 (2013.01); H01L 23/427 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01P 3/08 (2013.01); H01P 11/003 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6627 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A substrate, comprising:
an insulating material having a first thermal conductivity;
a transmission line wired to the insulating material, wherein the transmission line is configured to transmit an electrical signal from a semiconductor chip; and
a wiring layer that includes a heat storage material, wherein
the transmission line is wired to the wiring layer,
the heat storage material has a second thermal conductivity,
the second thermal conductivity is higher than the first thermal conductivity,
the heat storage material accumulates latent heat based on a phase transition of the heat storage material, and
the phase transition occurs within an operating temperature range of the semiconductor chip.