US 12,218,084 B2
Overvoltage protection device with trench contact
Andre Schmenn, Sachsenkam (DE); Isabella Goetz, Bodenwoehr (DE); and Egle Tylaite, Munich (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Mar. 23, 2022, as Appl. No. 17/702,342.
Prior Publication US 2023/0307388 A1, Sep. 28, 2023
Int. Cl. H01L 23/62 (2006.01); H01L 27/02 (2006.01)
CPC H01L 23/62 (2013.01) [H01L 27/0248 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An overvoltage protection device, comprising:
a semiconductor body comprising a substrate region disposed beneath an upper surface of the semiconductor body;
first and second contact pads disposed over the upper surface of the semiconductor body;
a trenched connector formed in the semiconductor body, a vertical voltage blocking device formed in the semiconductor body and connected between the second contact pad and the substrate region,
wherein the trenched connector comprises a trench that is formed in the upper surface of the semiconductor body and extends to the substrate region, and a metal electrode disposed within the trench,
wherein the metal electrode forms an electrically conductive connection between the first contact pad and the substrate region, and
wherein the substrate region forms an electrically conductive connection between the vertical voltage blocking device and the metal electrode.