US 12,218,079 B2
Semiconductor devices with reinforced substrates
Koustav Sinha, Boise, ID (US); Shams U. Arifeen, Boise, ID (US); and Christopher Glancey, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 6, 2023, as Appl. No. 18/151,029.
Application 18/151,029 is a division of application No. 17/013,321, filed on Sep. 4, 2020, granted, now 11,552,029.
Prior Publication US 2023/0154868 A1, May 18, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 23/16 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 21/4853 (2013.01); H01L 23/16 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor assembly, the method comprising:
fabricating a substrate by:
forming a recess in a base structure, and
positioning a reinforcement structure at least partially in the recess, wherein the reinforcement structure has a higher stiffness than the base structure; and
mounting a semiconductor die onto the substrate such that the semiconductor die is positioned at least partially over the reinforcement structure.