US 12,218,076 B2
Nanophotonic crack stop design
Pradip Sairam Pichumani, Bellevue, WA (US); and Sandeep Rekhi, San Jose, CA (US)
Assigned to Meta Platforms, Inc., Menlo Park, CA (US)
Filed by META PLATFORMS, INC., Menlo Park, CA (US)
Filed on Mar. 7, 2022, as Appl. No. 17/688,716.
Prior Publication US 2023/0280530 A1, Sep. 7, 2023
Int. Cl. H01L 23/00 (2006.01); G01N 21/95 (2006.01); G02B 6/12 (2006.01); G02B 6/124 (2006.01)
CPC H01L 23/562 (2013.01) [G01N 21/9505 (2013.01); G02B 6/124 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12138 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor wafer comprising:
an outer crack stop structure near a die edge periphery along a perimeter of a die edge;
an inner crack stop structure near the die edge periphery along the perimeter of the die edge; and
a waveguide configured to direct light,
the waveguide is between the inner crack stop structure near the die edge periphery along the perimeter of the die edge and the outer crack stop structure near the die edge periphery along the perimeter of the die edge, and
the waveguide is substantially positioned along two or more sides of the perimeter of the die edge.