CPC H01L 23/552 (2013.01) [H01L 23/49555 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/49176 (2013.01); H01L 2924/1443 (2013.01); H01L 2924/3025 (2013.01)] | 20 Claims |
1. An integrated chip, comprising:
a chip comprising a semiconductor device; and
a shielding structure abutting the chip, wherein the shielding structure comprises a first horizontal region adjacent to a first horizontal surface of the chip, wherein the first horizontal region comprises a first multilayer structure comprising a first dielectric layer and two or more metal layers, wherein the first dielectric layer is disposed between the two or more metal layers.
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