US 12,218,073 B2
Semiconductor marks and forming methods thereof
Shengan Zhang, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Appl. No. 17/431,756
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
PCT Filed Mar. 9, 2021, PCT No. PCT/CN2021/079668
§ 371(c)(1), (2) Date Aug. 18, 2021,
PCT Pub. No. WO2021/213032, PCT Pub. Date Oct. 28, 2021.
Claims priority of application No. 202010325831.1 (CN), filed on Apr. 23, 2020.
Prior Publication US 2023/0122820 A1, Apr. 20, 2023
Int. Cl. H01L 23/544 (2006.01); G01B 11/00 (2006.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); G03F 9/00 (2006.01); H01L 21/68 (2006.01)
CPC H01L 23/544 (2013.01) [G01B 11/00 (2013.01); G03F 7/20 (2013.01); G03F 7/70633 (2013.01); G03F 7/70683 (2013.01); G03F 9/7076 (2013.01); H01L 21/68 (2013.01); H01L 2223/54426 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor mark, comprising:
a previous layer mark, comprising first patterns and second pattern, the second pattern being located between adjacent first patterns, the first pattern being different from the second pattern in material property; and, wherein
the previous layer mark comprises a previous layer alignment mark on a wafer during exposure by a lithography machine or a previous layer overlay mark on the wafer after exposure;
the material property comprises a refractive index of a material and/or an extinction coefficient of the material;
the first pattern comprises a plurality of first sub-patterns and a plurality of second sub-patterns, and the first sub-patterns and the second sub-patterns are different in material property; and
a dimension of the first sub-patterns is ⅓ to ¾ of a dimension of the second sub-patterns.