US 12,218,067 B1
Through-wafer coaxial transition
Florian G. Herrault, Malibu, CA (US)
Assigned to HRL LABORATORIES, LLC, Malibu, CA (US)
Filed by HRL Laboratories, LLC, Malibu, CA (US)
Filed on Nov. 30, 2021, as Appl. No. 17/539,116.
Claims priority of provisional application 63/166,861, filed on Mar. 26, 2021.
Int. Cl. H01L 23/538 (2006.01); H01L 23/66 (2006.01); H01P 5/08 (2006.01)
CPC H01L 23/5384 (2013.01) [H01L 23/5385 (2013.01); H01L 23/66 (2013.01); H01P 5/085 (2013.01)] 9 Claims
OG exemplary drawing
 
1. An electronic assembly, comprising: a carrier wafer of a first material, having a top wafer surface and a bottom wafer surface; said carrier wafer comprising a through-wafer cavity having walls that join said top wafer surface to said bottom wafer surface; and an insulator of a second material, different from the first material, having insulator top and bottom surfaces, joined by insulator side surfaces, and having a conducting via that passes through said insulator between said insulator top surface and said insulator bottom surface; wherein the insulator is held in said through-wafer cavity by direct contact of the insulator side surfaces with an attachment metal that fills said through-wafer cavity; the electronic assembly further comprising a component chip having a top surface and a bottom surface joined by chip side surfaces, said component chip being held in said through-wafer cavity by direct contact of said chip side surface with said attachment metal.