CPC H01L 23/5286 (2013.01) [H01L 21/02603 (2013.01); H01L 21/823807 (2013.01); H01L 21/823871 (2013.01); H01L 27/0922 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. An integrated circuit device comprising:
a first-type active-region semiconductor structure extending in a first direction;
a second-type active-region semiconductor structure extending in the first direction and stacked with the first-type active-region semiconductor structure;
a front-side power rail in a front-side conductive layer above the first-type active-region semiconductor structure and the second-type active-region semiconductor structure, wherein the front-side power rail extending in the first direction is configured to maintain a first supply voltage;
a back-side power rail in a back-side conductive layer below the first-type active-region semiconductor structure and the second-type active-region semiconductor structure, wherein the back-side power rail extending in the first direction is configured to maintain a second supply voltage;
a source conductive segment intersecting the first-type active-region semiconductor structure at a source region of a transistor, and the source conductive segment conductively connected to the front-side power rail through a front-side terminal via-connector;
a back-side power node in the back-side conductive layer extending in the first direction; and
a top-to-bottom via-connector connected between the source conductive segment and the back-side power node.
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