US 12,218,058 B2
Integrated circuits having stacked transistors and backside power nodes
Chih-Yu Lai, Hsinchu (TW); Chih-Liang Chen, Hsinchu (TW); and Li-Chun Tien, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 27, 2021, as Appl. No. 17/459,818.
Prior Publication US 2023/0067311 A1, Mar. 2, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01)
CPC H01L 23/5286 (2013.01) [H01L 21/02603 (2013.01); H01L 21/823807 (2013.01); H01L 21/823871 (2013.01); H01L 27/0922 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit device comprising:
a first-type active-region semiconductor structure extending in a first direction;
a second-type active-region semiconductor structure extending in the first direction and stacked with the first-type active-region semiconductor structure;
a front-side power rail in a front-side conductive layer above the first-type active-region semiconductor structure and the second-type active-region semiconductor structure, wherein the front-side power rail extending in the first direction is configured to maintain a first supply voltage;
a back-side power rail in a back-side conductive layer below the first-type active-region semiconductor structure and the second-type active-region semiconductor structure, wherein the back-side power rail extending in the first direction is configured to maintain a second supply voltage;
a source conductive segment intersecting the first-type active-region semiconductor structure at a source region of a transistor, and the source conductive segment conductively connected to the front-side power rail through a front-side terminal via-connector;
a back-side power node in the back-side conductive layer extending in the first direction; and
a top-to-bottom via-connector connected between the source conductive segment and the back-side power node.