US 12,218,057 B2
Integrated circuit with backside interconnections and method of making same
Shih-Wei Peng, Hsinchu (TW); Te-Hsin Chiu, Hsinchu (TW); Wei-An Lai, Hsinchu (TW); Ching-Wei Tsai, Hsinchu (TW); and Jiann-Tyng Tzeng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Apr. 27, 2021, as Appl. No. 17/241,785.
Prior Publication US 2022/0344263 A1, Oct. 27, 2022
Int. Cl. H01L 23/528 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 23/5286 (2013.01) [H01L 21/0259 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a first transistor having a first drain region;
a second transistor having a second drain region, the first transistor and the second transistor being in an active layer of an integrated circuit; and
a first interconnect structure on a backside of the active layer, the first interconnect structure comprising:
a first backside contact electrically connected to the first drain region,
a second backside contact electrically connected to the second drain region, and
a backside interconnect directly connected to a sidewall of the first backside contact and a sidewall of the second backside contact, wherein the backside interconnect is a continuous structure, wherein a first distance from the first drain region to a distal end of the first backside contact from the first drain region is greater than a second distance from the first drain region to a distal end of the backside interconnect from the second drain region.