US 12,218,055 B2
Semiconductor device structure with conductive contacts of different widths and method for preparing the same
Ming-Hung Hsieh, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Apr. 15, 2024, as Appl. No. 18/635,387.
Application 18/635,387 is a division of application No. 17/387,203, filed on Jul. 28, 2021.
Prior Publication US 2024/0258235 A1, Aug. 1, 2024
Int. Cl. H01L 23/528 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/5283 (2013.01) [H01L 21/32053 (2013.01); H01L 21/76802 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/53209 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method for preparing a semiconductor device structure, comprising:
forming a sacrificial layer over a semiconductor substrate;
forming a first opening and a second opening penetrating through the sacrificial layer, wherein a first width of the first opening is different from a second width of the second opening;
filling the first opening and the second opening with a first metal pillar and a second metal pillar;
removing the sacrificial layer after the first metal pillar and the second metal pillar are formed; and
reducing a width of the first metal pillar and a width of the second metal pillar after the sacrificial layer is removed.