US 12,218,053 B2
Semiconductor device with metal spacers and method for fabricating the same
Kuo-Hui Su, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Nov. 14, 2023, as Appl. No. 18/508,575.
Application 18/508,575 is a division of application No. 18/230,182, filed on Aug. 4, 2023.
Application 17/533,414 is a division of application No. 16/665,350, filed on Oct. 28, 2019, granted, now 11,309,245.
Application 18/230,182 is a continuation in part of application No. 17/533,414, filed on Nov. 23, 2021, granted, now 11,756,885.
Prior Publication US 2024/0079321 A1, Mar. 7, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01)
CPC H01L 23/528 (2013.01) [H01L 21/7682 (2013.01); H01L 21/76885 (2013.01); H01L 21/76895 (2013.01); H01L 23/5329 (2013.01); H01L 23/535 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
an active area in the substrate, wherein the active area comprises a narrow portion having a first width and two side portions having a second width, wherein the narrow portion is disposed between the two side portions, and the first width is less than the second width from a top view;
a first plug positioned above the active area;
a plurality of second plugs positioned above the active area;
a plurality of metal spacers positioned above the first plug and the plurality of second plugs;
a plurality of air gaps respectively positioned between the plurality of metal spacers; and
a sealing film positioned above the plurality of metal spacers.