US 12,218,050 B2
Manufacturing method for semiconductor device
Te-Hsin Chiu, Hsinchu (TW); Wei-An Lai, Hsinchu (TW); Meng-Hung Shen, Hsinchu (TW); Wei-Cheng Lin, Hsinchu (TW); Jiann-Tyng Tzeng, Hsinchu (TW); and Kam-Tou Sio, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 22, 2022, as Appl. No. 17/846,650.
Application 17/846,650 is a division of application No. 17/123,664, filed on Dec. 16, 2020, granted, now 11,569,166.
Claims priority of provisional application 63/072,513, filed on Aug. 31, 2020.
Prior Publication US 2022/0328397 A1, Oct. 13, 2022
Int. Cl. H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/528 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor structure, comprising:
depositing a first insulation material over a substrate, wherein the substrate comprises an active region;
etching the first insulation material to define a first recess extending along a first direction at a first level of the first insulation material;
depositing a second insulation material lining with a sidewall of the first recess;
removing the second insulation material along a bottom surface of the first recess;
depositing a first metal line in the first recess; and
redepositing the second insulation material over the top surface of the first metal line, wherein the second insulation material is different from the first insulation material.