US 12,218,049 B2
Semiconductor structure and method for forming the same
Jen-Yuan Chang, Hsinchu (TW); and Chia-Ping Lai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Aug. 3, 2023, as Appl. No. 18/365,210.
Application 18/365,210 is a division of application No. 17/815,557, filed on Jul. 27, 2022, granted, now 11,854,969.
Application 17/815,557 is a continuation of application No. 17/103,679, filed on Nov. 24, 2020, granted, now 11,410,927, issued on Aug. 9, 2022.
Prior Publication US 2023/0411282 A1, Dec. 21, 2023
Int. Cl. H01L 23/525 (2006.01); H01L 23/00 (2006.01); H01L 23/10 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01)
CPC H01L 23/5256 (2013.01) [H01L 23/10 (2013.01); H01L 23/481 (2013.01); H01L 23/5227 (2013.01); H01L 23/5252 (2013.01); H01L 23/5258 (2013.01); H01L 23/5286 (2013.01); H01L 24/29 (2013.01); H01L 24/80 (2013.01); H01L 24/83 (2013.01); H01L 28/10 (2013.01); H01L 2224/29009 (2013.01); H01L 2224/29028 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1206 (2013.01); H01L 2924/141 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a first die comprising a fuse structure including a pair of conductive segments, wherein the pair of conductive segments are separated by a void and one of the pair of conductive segments is electrically connected to a bonding pad of the first die, wherein the bonding pad is electrically connected to ground; and
a second die over and bonded to the first die, the second die including an inductor electrically connected to the one of the pair of conductive segments.