US 12,218,043 B2
Interposer, semiconductor package including the same, and method of fabricating the interposer
Yukyung Park, Hwaseong-si (KR); Ungcheon Kim, Cheonan-si (KR); Sungwoo Park, Seongnam-si (KR); and Seungkwan Ryu, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 21, 2022, as Appl. No. 17/971,321.
Application 17/971,321 is a continuation of application No. 17/038,306, filed on Sep. 30, 2020, granted, now 11,482,483.
Claims priority of application No. 10-2019-0161836 (KR), filed on Dec. 6, 2019.
Prior Publication US 2023/0052195 A1, Feb. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/538 (2006.01); H01L 25/18 (2023.01); H01L 23/544 (2006.01)
CPC H01L 23/49827 (2013.01) [H01L 21/4853 (2013.01); H01L 21/486 (2013.01); H01L 23/49838 (2013.01); H01L 23/5385 (2013.01); H01L 25/18 (2013.01); H01L 23/544 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An interposer for a semiconductor package, the interposer comprising:
an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface;
a first through-electrode structure and a second through-electrode structure, each passing through the interposer substrate and protruding from the first main surface;
a first passivation layer surrounding a side surface of a protruding portion of the first through-electrode structure and a side surface of a protruding portion of the second through-electrode structure on the first main surface of the interposer substrate, the first passivation layer includes a first material;
a second passivation layer on the first passivation layer between the first through-electrode structure and the second through-electrode structure, the second passivation layer includes a second material that is different from the first material;
a connection terminal structure on the first main surface of the interposer substrate, the connection terminal structure contacts a portion of the first passivation layer, a portion of the second passivation layer, an upper surface of the protruding portion of the first through-electrode structure, and an upper surface of the protruding portion of the second through-electrode structure;
connection pads on the second main surface of the interposer substrate, wherein the connection pads contact lower surfaces of the first through-electrode structure and the second through-electrode structure; and
a redistribution layer on the connection pads and the second main surface of the interposer substrate.