US 12,218,034 B2
Semiconductor structure and method for manufacturing semiconductor structure
Ping-Heng Wu, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Feb. 10, 2022, as Appl. No. 17/650,659.
Application 17/650,659 is a continuation of application No. PCT/CN2021/110133, filed on Aug. 2, 2021.
Claims priority of application No. 202011281266.X (CN), filed on Nov. 16, 2020.
Prior Publication US 2022/0165644 A1, May 26, 2022
Int. Cl. H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 21/76898 (2013.01); H01L 23/5226 (2013.01); H01L 23/49827 (2013.01); H01L 23/522 (2013.01); H01L 23/528 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a base;
a conductive pillar at least located in the base;
at least two connecting structures spaced apart, at least one connecting structure being electrically connected to an end of the conductive pillar, a material of the connecting structure being different from that of the conductive pillar, and a total area of an orthographic projection of the connecting structure on the base being less than an area of an orthographic projection of the conductive pillar on the base;
an electrical connection layer electrically connected to an end of the connecting structure distal from the conductive pillar;
at least one first structure, part of first structures being arranged around the connecting structures or interspersed in a spacing of a plurality of connecting structures, and the first structures being configured to generate or transmit an electric signal of the semiconductor structure; and
at least another connected structure is electrically connected with the first structure.