US 12,218,033 B2
Semiconductor structure, method for forming same and stacked structure
Luguang Wang, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jan. 25, 2022, as Appl. No. 17/648,903.
Application 17/648,903 is a continuation of application No. PCT/CN2021/109149, filed on Jul. 29, 2021.
Claims priority of application No. 202110357908.8 (CN), filed on Apr. 1, 2021.
Prior Publication US 2022/0319959 A1, Oct. 6, 2022
Int. Cl. H01L 23/48 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 21/76898 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a base, comprising a substrate and a dielectric layer, wherein the substrate has a front surface and a back surface which are oppositely arranged, and the dielectric layer is located on the front surface;
a connecting hole, penetrating through the substrate and extending to the dielectric layer;
an insulating layer, located on a surface of an inner wall of the connecting hole; and
a connecting structure, comprising a first barrier layer, a second barrier layer and a conductive structure, wherein the first barrier layer is located on a surface of the insulating layer, the second barrier layer is located between the first barrier layer and the conductive structure, and an air gap exists between the second barrier layer and the first barrier layer, wherein
the connecting structure further comprises an isolation layer, the isolation layer is located between the first barrier layer and the second barrier layer, and the first barrier layer, the isolation layer and the second barrier layer are arranged together defining the air gap.