US 12,218,026 B2
Package structure for heat dissipation
Chen-Hua Yu, Hsinchu (TW); Sung-Feng Yeh, Taipei (TW); and Ming-Fa Chen, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 12, 2023, as Appl. No. 18/332,957.
Application 16/230,552 is a division of application No. 15/720,565, filed on Sep. 29, 2017, granted, now 10,163,750, issued on Dec. 25, 2018.
Application 18/332,957 is a continuation of application No. 17/838,648, filed on Jun. 13, 2022, granted, now 11,854,785.
Application 17/838,648 is a continuation of application No. 17/128,918, filed on Dec. 21, 2020, granted, now 11,362,013, issued on Jun. 14, 2022.
Application 17/128,918 is a continuation of application No. 16/230,552, filed on Dec. 21, 2018, granted, now 10,872,836, issued on Dec. 22, 2020.
Claims priority of provisional application 62/460,580, filed on Feb. 17, 2017.
Claims priority of provisional application 62/430,274, filed on Dec. 5, 2016.
Prior Publication US 2023/0326825 A1, Oct. 12, 2023
Int. Cl. H01L 23/367 (2006.01); H01L 21/683 (2006.01); H01L 23/373 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/3675 (2013.01) [H01L 21/6835 (2013.01); H01L 23/3677 (2013.01); H01L 23/3736 (2013.01); H01L 23/538 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 21/568 (2013.01); H01L 23/49816 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2221/68345 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/1304 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1461 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
providing a structure comprising:
a carrier wafer, and
a first device wafer with an adhesion layer between the carrier wafer and the first device wafer;
forming a plurality of first ablation structures in the structure, each of the plurality of first ablation structures extending through the first device wafer, the adhesion layer and a portion of the carrier wafer;
forming a first protective layer on the structure before the plurality of first ablation structures are formed; and
removing the first protective layer after the plurality of first ablation structures are formed.