US 12,218,024 B2
Semiconductor device and fabrication method thereof
Motoyoshi Kubouchi, Matsumoto (JP); and Soichi Yoshida, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on Nov. 13, 2023, as Appl. No. 18/507,123.
Application 18/507,123 is a division of application No. 17/317,785, filed on May 11, 2021, granted, now 11,830,782.
Application 17/317,785 is a division of application No. 16/589,111, filed on Sep. 30, 2019, granted, now 11,049,785, issued on Jun. 29, 2021.
Claims priority of application No. 2018-208430 (JP), filed on Nov. 5, 2018.
Prior Publication US 2024/0079286 A1, Mar. 7, 2024
Int. Cl. H01L 23/34 (2006.01); H01L 21/22 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01)
CPC H01L 23/34 (2013.01) [H01L 21/221 (2013.01); H01L 27/0664 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/402 (2013.01); H01L 29/7397 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate including a drift region of a first conductivity type;
a temperature sensing unit provided above the semiconductor substrate; and
an upper lifetime control region that is provided within the semiconductor substrate and in a region overlapping with the temperature sensing unit in top view and includes a lifetime killer, wherein
the temperature sensing unit does not include the lifetime killer.