US 12,218,022 B2
Passivation structure with planar top surfaces
Yi-Hsiu Chen, Hsinchu (TW); Wen-Chih Chiou, Zhunan Township (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 20, 2023, as Appl. No. 18/355,799.
Application 18/355,799 is a continuation of application No. 17/324,836, filed on May 19, 2021, granted, now 11,817,361.
Claims priority of provisional application 63/148,647, filed on Feb. 12, 2021.
Prior Publication US 2023/0360992 A1, Nov. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/3171 (2013.01) [H01L 21/56 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/24 (2013.01); H01L 24/73 (2013.01); H01L 25/0652 (2013.01); H01L 2224/03916 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/1191 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/16147 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/211 (2013.01); H01L 2224/24145 (2013.01); H01L 2224/24225 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/0652 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a metal pad;
a passivation layer, with a portion of the passivation layer overlapping a part of the metal pad;
a planarization layer comprising a planar top surface, wherein the planar top surface comprises:
a first part overlapping the metal pad; and
a second part vertically offset from the metal pad;
a polymer layer comprising:
a first portion overlapping the planarization layer; and
a second portion extending into the planarization layer and the passivation layer to contact the metal pad; and
a conductive feature in the polymer layer to contact the metal pad.