US 12,218,018 B2
Semiconductor encapsulant strength enhancer
Georg Troska, Froendenberg/Ruhr (DE); and Hans Hartung, Warstein (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Apr. 21, 2022, as Appl. No. 17/726,045.
Prior Publication US 2023/0343661 A1, Oct. 26, 2023
Int. Cl. H01L 23/26 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/053 (2006.01); H01L 23/16 (2006.01); H01L 23/24 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/373 (2006.01); H01L 23/498 (2006.01); H01L 25/07 (2006.01)
CPC H01L 23/26 (2013.01) [H01L 21/56 (2013.01); H01L 23/296 (2013.01); H01L 23/3121 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor module, comprising:
a power electronics carrier comprising a structured metallization layer disposed on an electrically insulating substrate;
a power semiconductor die mounted on the power electronics carrier;
a housing comprising sidewalls that surround an interior volume over the power electronics carrier;
a reinforcing structure contained within the interior volume and comprising a textured surface that is accessible by fluid;
a volume of curable encapsulant disposed within the interior volume and encapsulating the power semiconductor die,
wherein the reinforcing structure is embedded within the volume of curable encapsulant such that the textured surface adheres to the encapsulant,
wherein the reinforcing structure has a tensile strength that is greater than a tensile strength of the curable encapsulant, and
wherein the reinforcing structure comprises a material with a coefficient of thermal expansion that is equal to or less than a coefficient of thermal expansion of the encapsulant.