| CPC H01L 22/32 (2013.01) [H01L 23/528 (2013.01)] | 13 Claims |
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1. A semiconductor structure, wherein the semiconductor structure is provided with a test region, and in the test region, the semiconductor structure comprises:
a semiconductor substrate provided with a plurality of separate active regions extending along a first direction;
a plurality of bit line contact structures arranged on the semiconductor substrate, wherein in the first direction, each active region is electrically connected to two bit line contact structures; and
a plurality of wire groups arranged along a second direction, wherein each wire group comprises a plurality of wires extending along a third direction, and in the third direction, each of the two bit line contact structures for each active region is connected to a respective one of the two bit line contact structures for the active region adjacent to said each active region by a respective one of the wires, so that two wire groups of the wire groups cooperate with each other to form a conductive path;
wherein the wires in different wire groups re misaligned with each other in a fourth direction;
wherein the plurality of wires in each group are formed by cutting an entire wire in the fourth direction according to a set distance, and an end of each wire is inclined in the fourth direction;
wherein an angle between the fourth direction and the second direction is a preset value, and the preset value is set according to a pattern of the bit line contact structures to avoid the bit line contact structures from being destroyed during the cutting; and
wherein the preset value ranges from 30 degrees to 50 degrees.
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