US 12,218,015 B2
Interferometer systems and methods for real time etch process compensation control
Chansyun Yang, Hsinchu (TW); Chan-Lon Yang, Taipei (TW); Keh-Jeng Chang, Hsinchu (TW); and Perng-Fei Yuh, Walnut Creek, CA (US)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 10, 2021, as Appl. No. 17/397,989.
Claims priority of provisional application 63/176,158, filed on Apr. 16, 2021.
Prior Publication US 2022/0336294 A1, Oct. 20, 2022
Int. Cl. H01L 21/67 (2006.01); G03F 7/00 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H01L 21/027 (2006.01)
CPC H01L 22/20 (2013.01) [G03F 7/70875 (2013.01); H01L 21/67253 (2013.01); H01L 22/12 (2013.01); H01L 22/14 (2013.01); G03F 7/70625 (2013.01); H01L 21/0275 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a beam conditioning assembly configured to output one or more wavelengths to a substrate being processed and receive one or more reflected wavelengths from the substrate, wherein the beam conditioning assembly comprises:
an orthogonal frequency division multiplex (OFDM) device configured to provide a plurality of beams each having a different wavelength;
a beam selector configured to select the one or more wavelengths; and
a multiple input multiple output (MIMO) device comprising a plurality of antenna elements configured to direct the selected one or more wavelengths as a beam to scan a surface of the substrate and receive the one or more reflected wavelengths;
a device configured to process the one or more reflected wavelengths to predict, using a machine learning model, a process variable and compare the predicted process variable with a measured process variable to obtain a comparison result; and
a laser device configured to direct a laser beam to a region of the substrate and change a lithophotographic condition of the region of the substrate in response to the comparison result.