US 12,218,012 B2
Method of manufacturing semiconductor devices with multiple silicide regions
Wei-Yip Loh, Hsinchu (TW); Yan-Ming Tsai, Toufen Township (TW); Hung-Hsu Chen, Tainan (TW); Chih-Wei Chang, Hsinchu (TW); and Sheng-Hsuan Lin, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 27, 2023, as Appl. No. 18/360,478.
Application 17/827,355 is a division of application No. 16/527,350, filed on Jul. 31, 2019, granted, now 11,348,839, issued on May 31, 2022.
Application 18/360,478 is a continuation of application No. 17/827,355, filed on May 27, 2022, granted, now 11,810,826.
Prior Publication US 2023/0369130 A1, Nov. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/8238 (2006.01); H01L 21/285 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 21/266 (2006.01); H01L 21/3065 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/823814 (2013.01) [H01L 21/28518 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 21/266 (2013.01); H01L 21/3065 (2013.01); H01L 21/31053 (2013.01); H01L 21/31111 (2013.01); H01L 21/32135 (2013.01); H01L 21/76224 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
depositing nickel and platinum on a source/drain region within a semiconductor fin, wherein the depositing forms a metal-rich silicide with a metal-rich phase, the platinum being insoluble within the metal-rich phase of the metal-rich silicide;
masking a first portion of the nickel and the platinum;
removing a second portion of the nickel and the platinum exposed by the mask;
annealing the metal-rich silicide to change the metal-rich phase of the metal-rich silicide to a semiconductor-rich phase, the platinum being soluble within the semiconductor-rich phase; and
forming a second silicide with the platinum and the semiconductor-rich phase.