US 12,218,009 B2
Semiconductor package and methods of forming the same
Meng-Che Tu, Hsinchu (TW); Wei-Chih Chen, Taipei (TW); Sih-Hao Liao, New Taipei (TW); Yu-Hsiang Hu, Hsinchu (TW); Hung-Jui Kuo, Hsinchu (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 1, 2023, as Appl. No. 18/363,458.
Application 17/341,015 is a division of application No. 16/399,710, filed on Apr. 30, 2019, granted, now 11,031,289, issued on Jun. 8, 2021.
Application 18/363,458 is a continuation of application No. 17/341,015, filed on Jun. 7, 2021, granted, now 11,837,502.
Claims priority of provisional application 62/753,527, filed on Oct. 31, 2018.
Prior Publication US 2023/0377975 A1, Nov. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/82 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 21/82 (2013.01) [H01L 21/565 (2013.01); H01L 23/3107 (2013.01); H01L 24/08 (2013.01); H01L 24/17 (2013.01); H01L 2224/02372 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
forming a first dielectric material over a passivation layer of a die and over a die connector of the die, the die connector extending through the passivation layer;
curing the first dielectric material, wherein after curing the first dielectric material, the cured first dielectric material comprises:
a first portion over and contacting the die connector; and
a second portion laterally spaced apart from the die connector, wherein the first portion extends further from the passivation layer than the second portion;
forming a second dielectric material over the cured first dielectric material; and
curing the second dielectric material, wherein after curing the second dielectric material, the cured second dielectric material comprises:
a third portion over and contacting the first portion of the cured first dielectric material; and
a fourth portion over the second portion of the cured first dielectric material, wherein the third portion is thinner than the fourth portion.