US 12,218,004 B2
Method for forming semiconductor structure
He Zuopeng, Shanghai (CN); Yang Ming, Shanghai (CN); and Bei Duohui, Shanghai (CN)
Assigned to SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, Shanghai (CN); and SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION, Beijing (CN)
Filed by Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN); and Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN)
Filed on Apr. 13, 2021, as Appl. No. 17/229,255.
Claims priority of application No. 202011061150.5 (CN), filed on Sep. 30, 2020.
Prior Publication US 2022/0102205 A1, Mar. 31, 2022
Int. Cl. H01L 21/76 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/76832 (2013.01) [H01L 21/0338 (2013.01); H01L 21/7684 (2013.01); H01L 21/76877 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor structure, comprising:
providing a base;
forming a pattern memory layer on the base, wherein at least a first trench and a second trench are provided on the pattern memory layer, an extending direction of the first trench is parallel to an extending direction of the second trench, and the first trench and the second trench are formed using different masks, a material of the pattern memory layer is silicon oxide and is not silicon nitride; and
forming mandrel lines separated on the base at positions of the base that correspond to the first trench and the second trench, a material of the mandrel lines consists of at least one of amorphous carbon, a photoresist, or polycrystalline silicon.