CPC H01L 21/67126 (2013.01) [C23C 14/35 (2013.01); C23C 14/50 (2013.01); H01J 37/32513 (2013.01); H01J 37/32715 (2013.01); H01J 37/3405 (2013.01); H01J 37/3426 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/332 (2013.01); H01L 21/67167 (2013.01); H01L 21/67207 (2013.01)] | 21 Claims |
1. A substrate processing chamber configured to perform a process on a substrate, comprising:
a first region;
a second region;
a substrate support moveable between a raised position and a lowered position, the substrate support including a substrate support surface disposed in the first region and configured to support a substrate during the performance of the process on the substrate; and
a lift pin assembly comprising:
an upper support coupled to the substrate support, wherein the upper support comprises a first surface, a second surface and an opening formed between the first surface and the second surface;
a lower support comprising a first surface and a second surface;
a sealing member disposed between the upper support and the lower support, wherein the sealing member comprises:
a central portion comprising an inside surface and an outside surface that is opposite to the inside surface;
a first end of the central portion coupled to the first surface of the upper support; and
a second end of the central portion coupled to the first surface of the lower support, and
a lift pin passing through the opening in the upper support, wherein
the lift pin is configured to support a substrate above the substrate support surface,
the lift pin is disposed in the first region and over a portion of the first surface of the lower support,
at least a portion of the first region being defined by the inside surface of the central portion, the first surface of the upper support, and the first surface of the lower support,
at least a portion of the second region being defined by at least the outside surface of the central portion and the second surface of the lower support, and
the sealing member being configured to isolate the at least the portion of the first region from the second region during the performance of the process on the substrate.
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