US 12,217,974 B2
Localized stress modulation by implant to back of wafer
Sony Varghese, Manchester, MA (US); Pradeep Subrahmanyan, Cupertino, CA (US); Dennis Rodier, Francestown, NH (US); and Kyuha Shim, Andover, MA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Aug. 6, 2021, as Appl. No. 17/396,101.
Claims priority of provisional application 63/179,944, filed on Apr. 26, 2021.
Prior Publication US 2022/0344171 A1, Oct. 27, 2022
Int. Cl. H01L 21/3115 (2006.01); H01J 37/147 (2006.01); H01J 37/304 (2006.01); H01J 37/317 (2006.01); H01L 21/66 (2006.01)
CPC H01L 21/31155 (2013.01) [H01J 37/1474 (2013.01); H01J 37/304 (2013.01); H01J 37/3171 (2013.01); H01L 22/12 (2013.01); H01J 2237/24585 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of film layers are disposed on the first main side and the second main side;
performing a metrology scan to determine an amount of distortion to the substrate due to formation of the plurality of film layers;
removing the plurality of film layers from the second main side of the substrate;
depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film are determined based on the amount of distortion to the substrate, and wherein the thickness varies across the stress compensation film; and
directing ions to the stress compensation film in an ion implant procedure.