US 12,217,970 B2
Plasma etching method using perfluoropropyl carbinol
Chang-Koo Kim, Seoul (KR); and Jun-Hyun Kim, Seongnam-si (KR)
Assigned to AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Suwon-si (KR)
Appl. No. 17/923,495
Filed by AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Suwon-si (KR)
PCT Filed Mar. 2, 2021, PCT No. PCT/KR2021/002532
§ 371(c)(1), (2) Date Nov. 4, 2022,
PCT Pub. No. WO2021/225264, PCT Pub. Date Nov. 11, 2021.
Claims priority of application No. 10-2020-0054572 (KR), filed on May 7, 2020.
Prior Publication US 2023/0197466 A1, Jun. 22, 2023
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/31116 (2013.01) [H01J 37/32449 (2013.01); H01L 21/02164 (2013.01); H01L 21/31144 (2013.01); H01J 2237/3341 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A plasma etching method comprising:
a first step of vaporizing liquid perfluoropropyl carbinol (PPC);
a second step of supplying a discharge gas containing the vaporized perfluoropropyl carbinol (PPC) and argon gas to a plasma chamber in which an etching target is disposed; and
a third step of discharging the discharge gas to generate plasma and of performing plasma etching on the etching target using the generated plasma.