US 12,217,967 B2
Indium phosphide substrate
Shunsuke Oka, Kitaibaraki (JP); Kenji Suzuki, Kitaibaraki (JP); and Hideaki Hayashi, Kitaibaraki (JP)
Assigned to JX ADVANCED METALS CORPORATION, Tokyo (JP)
Appl. No. 17/600,226
Filed by JX ADVANCED METALS CORPORATION, Tokyo (JP)
PCT Filed Dec. 23, 2020, PCT No. PCT/JP2020/048288
§ 371(c)(1), (2) Date Sep. 30, 2021,
PCT Pub. No. WO2021/153120, PCT Pub. Date Aug. 5, 2021.
Claims priority of application No. 2020-013045 (JP), filed on Jan. 29, 2020; and application No. 2020-082768 (JP), filed on May 8, 2020.
Prior Publication US 2022/0208549 A1, Jun. 30, 2022
Int. Cl. H01L 21/304 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/304 (2013.01) [H01L 21/02013 (2013.01); H01L 21/02016 (2013.01); H01L 21/02021 (2013.01); H01L 21/02024 (2013.01)] 11 Claims
OG exemplary drawing
 
1. An indium phosphide substrate,
wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 0°<θ≤110° for each of the planes A where a distance from the main surface to each of the planes A is 100 μm or more and 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, and
wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 μm,
a chamfered width from the edge on the main surface side of the wafer indium phosphide substrate is in the range of 50 to 95 μm,
the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.